In this work, we dope an AlGaN/GaN heterostructure consisting of a GaN (2 nm) cap layer, an Al0.25Ga0.75N (25 nm) barrier, and a GaN (2 μm) substrate grown on a 6” Si wafer with Mn by sputtering deposition and thermal annealing to create a dilute magnetic semiconductor material following the process flow. These are all the essential pre-requisites for operation of spin transistors in circuits.
In particular, dilute magnetic semiconductors (DMS), such as Mn doped GaN, show the great promise of a high Curie temperature (220K–370K), exceeding room temperature, and a large concentration of holes. Spintronic applications rely on magnetic semiconductor materials with suitable properties. One of the most promising solutions to deliver a technological breakthrough is exploring electron spin in metals and semiconductors with applications from spin transistors to quantum sensors, and quantum computing. Semiconductor CMOS nano-electronics is intensively seeking solutions for future digital applications.
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